Publications

  1. M. Yildirim, S. March, R. Mathew, A. Gamouras, X. Liu, M. Dobrowolska, J. K. Furdyna, and K. C. Hall
    Interband dephasing and photon echo response in GaMnAs
    Phys. Rev. B 101, 062403 (2012).

  2. A. Gamouras, R. Mathew, and K. C. Hall
    Optically Engineered Ultrafast Pulses for Controlled Rotations of Exciton Qubits in Semiconductor Quantum Dots
    J. Appl. Phys 112, 014313 (2012).

  3. T. de Boer, A. Gamouras, S. March, V. Novák, and K. C. Hall
    Observation of a blue shift in the optical response at the fundamental band gap in Ga1-xMnxAs
    Phys. Rev. B 85, 033202 (2012).

  4. R. Mathew, C. E. Pryor, M. E. Flatté, and K. C. Hall
    Optimal quantum control for conditional rotation of exciton qubits in semiconductor quantum dots
    Phys. Rev. B 84, 205322 (2011).

  5. M. Yildirim, S. March, R. Mathew, A. Gamouras, X. Liu, M. Dobrowolska, J. K. Furdyna, and K. C. Hall
    Electronic structure of Ga1-xMnxAs probed by four-wave mixing spectroscopy
    Phys. Rev. B 84, 121202 (2011).

  6. J. P. Zahn, A. Gamouras, S. March, X. Liu, J. K. Furdyna, and K. C. Hall
    Ultrafast studies of carrier and magnetization dynamics in GaMnAs
    J. Appl. Phys. 107, 033908 (2010).

  7. K. C. Hall, J. P. Zahn, A. Gamouras, S. March, J. L. Robb, X. Liu, and J. K. Furdyna
    Ultrafast optical control of coercivity in GaMnAs
    Appl. Phys. Lett. 93, 032504 (2008).

  8. J. L. Robb, Y. Chen, A. Timmons, K. C. Hall, O. B. Shchekin, D. G. Deppe
    Time-resolved Faraday rotation measurements of spin relaxation in InGaAs/GaAs quantum dots: Role of excess energy
    Appl. Phys. Lett. 90, 153118 (2007).
    Selected for: Virtual Journal of Nanoscale Science & Technology, February (2007); Virtual Journal of Ultrafast Science, March (2007).

  9. K. C. Hall, E. J. Koerperick, T. F. Boggess, O. B. Shchekin, and D. G. Deppe
    Hole spin relaxation in neutral InGaAs quantum dots: Decay to dark states
    Appl. Phys. Lett. 90, 053109 (2007)
    Selected for: Virtual Journal of Nanoscale Science & Technology, April (2007); Selected for: Virtual Journal of Ultrafast Science, May (2007).

  10. K. C. Hall and M. E. Flatté
    Performance of a spin-based insulated gate field effect transistor
    Appl. Phys. Lett. 88, 162503 (2006)
    Selected for: Virtual Journal of Nanoscale Science & Technology, May (2006).

  11. J. Hicks, K. Gundogdu, A. N. Kocbay, K. C. Hall, T. F. Boggess, K. Holabird, A. Hunter, and J. J. Zinck
    Bias-Dependent spin relaxation in a [110]-InAs/AlSb 2DES
    Physica E 34, 371 (2006).

  12. K. C. Hall, K. Gundogdu, J. L. Hicks, A. N. Kocbay, M. E. Flatté, T. F. Boggess, K. Holabird, A. Hunter, D. H. Chow, J. J. Zinck
    Room-temperature electric-field controlled spin dynamics in (110) InAs quantum wells
    Appl. Phys. Lett. 86, 202114, (2005)
    Selected for: Virtual Journal of Nanoscale Science & Technology, May (2005).

  13. K. Gundogdu, K. C. Hall, E. J. Koerperick, C. E. Pryor, M. E. Flatté, T. F. Boggess, O. B. Shchekin, D. G. Deppe
    Electron and hole spin dynamics in semiconductor quantum dots
    Appl. Phys. Lett. 86, 113111, (2005).

  14. J. J. Zinck, D. H. Chow, K. S. Holabird, J. N. Schulman, K. C. Hall, T. F. Boggess
    Resonant tunneling in (110) oriented interband diodes
    Appl. Phys. Lett. 86, 073502 (2005).

  15. K. Gundogdu, K. C. Hall, T. F. Boggess, D. G. Deppe, O. B. Shchekin
    Ultrafast electron capture into p-modulation-doped quantum dots
    Appl. Phys. Lett. 85, 4570 (2004).

  16. K. C. Hall, K. Gundogdu, Thomas F. Boggess, O. B. Shchekin, D. G. Deppe
    Carrier and Spin Dynamics in Charged Quantum Dots (Invited)
    Proc. of SPIE 5361, 76 (2004).

  17. S. Calvez, J.-M. Hopkins, S. A. Smith, A. H. Clark, R. Macaluso, H. D. Sun, M. D. Dawson, T. Jouhti, M. Pessa, K. Gundogdu, K. C. Hall, T. F. Boggess
    GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 micron device applications
    J. Crystal Growth 268, 457 (2004).

  18. H. D. Sun, R. Macaluso, S. Calvez, G. J. Valentine, D. Burns, M. D. Dawson, K. Gundogdu, K. C. Hall, T. F. Boggess, T. Jouhti, and M. Pessa
    Effects of rapid thermal annealing on the optical properties of low-loss 1.3 micron GaInNAs/GaAs saturable Bragg reflectors
    J. Appl. Phys. 96, 1418 (2004).

  19. K. Gundogdu, K. C. Hall, Thomas F. Boggess, D. G. Deppe, O. B. Shchekin
    Efficient electron spin detection with positively charged quantum dots
    Appl. Phys. Lett. 84, 2793 (2004)
    Selected for: Virtual Journal of Nanoscale Science and Technology, April (2004); Selected for: Virtual Journal of Ultrafast Science, May (2004).

  20. K. C. Hall, K. Gundogdu, E. Altunkaya, W. H. Lau, M. E. Flatté, T. F. Boggess, J. J. Zinck, W. B. Barvosa-Carter, and S. L. Skeith
    Spin Relaxation in (110) and (001) InAs/GaSb Superlattices
    Phys. Rev. B 68, 115311 (2003)
    Selected for: Virtual Journal of Nanoscale Science and Technology, September (2003); Selected for: Virtual Journal of Ultrafast Science, October (2003).

  21. K. C. Hall, W. H. Lau, K. Gundogdu, M. E. Flatté, and T. F. Boggess
    Non-magnetic semiconductor spin transistor
    Appl. Phys. Lett. 83, 2937 (2003) Selected for: Virtual Journal of Nanoscale Science and Technology, October (2003).

  22. K. C. Hall, G. R. Allan, H. M. van Driel, T. Krivosheeva, W. Poetz
    Coherent response of spin-orbit split-off excitons in InP: Isolation of many-body effects through interference
    Phys. Rev. B 65, 201201(R) (2002).

  23. K. C. Hall, S. W. Leonard, H. M. van Driel, A. R. Kost, and E. Selvig
    Suppression of Intervalley Scattering in Ga(As)Sb Quantum Wells
    Appl. Phys. Lett. 77, 2882 (2000).

  24. K. C. Hall, S. W. Leonard, H. M. van Driel, A. R. Kost, E. Selvig, and D. H. Chow
    Subpicosecond spin relaxation in GaAsSb multiple quantum wells
    Appl. Phys. Lett. 75, 4156 (1999).

  25. J. M. Fraser, and K. C. Hall
    Interferometric nonlinear mixing in multiple-pass femtosecond optical parametric amplification
    Optics Express 5, 21 (1999).

Patents

  1. Kimberley C. Hall (Primary), Wayne H. Lau, Kenan Gundogdu, Michael E. Flatté, Thomas F. Boggess.
    Nonmagnetic Semiconductor Spin Transistor
    United States patent filed by the University of Iowa Technology Transfer Office. Awarded February 17, 2009. US007492022B2.
    The invention is a nonmagnetic semiconductor spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow.